Toshiba and SanDisk announces new 3D NAND

Toshiba and SanDisk today announced development of the world’s first 48-layers 3D stacked flash memory called BiCS.

The chip is based on 48-layer stacking process, which enhances the reliability of write /erase endurance and boosts write speed. It is suited for use in diverse applications, Smartphones, Future laptops and SSDs.


Mass production will begun after 2016, when construction at fab2 will be completed at Yokkaichi Operations.

Source: Toshiba

Intel and Micron Debuts Breakthrough Memory Technology

Intel and Micron unveiled 3D XPoint technology, a non-volatile memory that has the potential to revolutionize the digital era by fast access to large sets of data. 3D XPoint technology (Production ready) is a major breakthrough in memory process technology and the first new memory category since the introduction of NAND flash in 1989.

Highlights as mentioned by Intel:

  • Intel and Micron begin production on new class of non-volatile memory, creating the first new memory category in more than 25 years.
  • New 3D XPoint™ technology brings non-volatile memory speeds up to 1,000 times faster1 than NAND, the most popular non-volatile memory in the marketplace today.
  • The companies invented unique material compounds and a cross point architecture for a memory technology that is 10 times denser than conventional memory2.
  • New technology makes new innovations possible in applications ranging from machine learning to real-time tracking of diseases and immersive 8K gaming.